剑桥大学出版社期刊
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作者:Masafumi Yamaguchi , Hiroyuki Yamada ...
来源:[J].Journal of Materials Research(IF 1.713), 2017, Vol.32 (18), pp.3445-3457Cambridge U Press
摘要:The present status of R&D for various types of solar cells is presented by overviewing research and development projects for solar cells in Japan as the PV R&D Project Leader of the New Energy and Industrial Technology Development Organization (NEDO) and the Japan Science an...
作者:Masafumi Yamaguchi , Kan-Hua Lee ...
来源:[J].Journal of Materials Research(IF 1.713), 2018, Vol.33 (17), pp.2621-2626Cambridge U Press
摘要:Efficiency potential of crystalline Si solar cells is analyzed by considering external radiative efficiency (ERE), voltage, and fill factor losses. Crystalline Si solar cells have an efficiency potential of more than 28.5% by realizing ERE of 20% from about 5% and normalized...
作者:Masafumi Yamaguchi
来源:[J].Journal of Materials Research(IF 1.713), 1991, Vol.6 (2), pp.376-384Cambridge U Press
摘要:The reduction of dislocation density in heteroepitaxial III-V compound films on Si substrates has been studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High-quality GaAs films on Si, with a dislocation density of about 106 cm−2, have been ...
作者:Masafumi Yamaguchi , Nobuaki Kojima ...
来源:[J].MRS Proceedings, 2014, Vol.1670Cambridge U Press
摘要:ABSTRACT III-V compound multi-junction solar cells have high efficiency potential of more than 50% due to wide photo response, while limiting efficiencies of single-junction solar cells are 31-32%. In order to realize high efficiency III-V compound multi-junction solar cells, und...
作者:Masafumi Yamaguchi , Boussairi Bouzazi ...
来源:[J].MRS Proceedings, 2014, Vol.1638Cambridge U Press
摘要:ABSTRACT We review recent progresses on in-situ observation of lattice relaxation of III-V lattice-mismatched system and analyses of defect properties in III-V-N solar cell materials. We found that there were five phases during the InGaAs growth on GaAs substrate. The transition ...
作者:... Seiji Fujikawa , Yoshio Ohshita , Masafumi Yamaguchi
来源:[J].MRS Proceedings, 2010, Vol.1268Cambridge U Press
摘要:Abstract The in situ X-ray reciprocal space mapping (in situ RSM) of symmetric diffraction measurements during lattice-mismatched InGaAs/GaAs(001) growth were performed to investigate the strain relaxation mechanisms. The evolution of the residual strain and crystal quality were ...
作者:Masafumi Yamaguchi , Koshi Ando , Hidehiko Kamada
来源:[J].MRS Proceedings, 1994, Vol.373Cambridge U Press
摘要:Abstract Irradiation effects of high-energy electrons and protons, and 60Co gamma-rays on InP-related materials have been examined in comparison with those of GaAs and Si. Superior radiation-resistance of InP-related materials and their devices compared to GaAs and Si ...
作者:Masafumi Yamaguchi , Susumu Kondo
来源:[J].MRS Proceedings, 1989, Vol.145Cambridge U Press
摘要:Abstract Heteroepitaxial growth of GaAs, InP, GaP and InGaP on Si substrates is studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High qgaliti GaAs films on Si, with a dislocation density of about 106 cm−2, are obtained by combining straine...
作者:Aurangzeb Khan , Masafumi Yamaguchi
来源:[J].MRS Proceedings, 2007, Vol.994Cambridge U Press
摘要:Abstract Deep level transient spectroscopy (DLTS) is the best technique for monitoring and characterizing deep levels introduced intentionally or occurring naturally in semiconductor materials and complete devices. DLTS has the advantage over all the techniques used to-date in th...
作者:... Yoshio Itoh , Akio Yamamoto , Masafumi Yamaguchi
来源:[J].MRS Proceedings, 1988, Vol.116Cambridge U Press
摘要:Abstract The effectiveness of thermal annealing and strained layer superlattices (SLS's) in defect reduction in Si/GaAs structures was studied. The GaAs layers were grown on (100) Si substrates by low pressure MOCVD. They were evaluated by TEM, HREM, EBIC and PL. As-grown la...

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