英国物理学会
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作者:Li Zhonghui , Chen Tangsheng ...
来源:[J].Journal of Semiconductors, 2015, Vol.36 (1)IOP
摘要:0.25 μm GaN HEMT with AlGaN back barrier for high power switch application has been presented. By introducing AlGaN back barrier, the buffer layer breakdown voltage for the metal-organic chemical vapor deposited AlGaN/GaN hetero-structure on 3-inch SiC substrate showed a ...
作者:Li Zhonghui , Kong Yuechan
来源:[J].Journal of Semiconductors, 2016, Vol.37 (8)IOP
摘要:Ku-band GaN power transistor with output power over 100 W under the pulsed operation mode is presented. A high temperature A1N nucleation together with an Fe doped GaN buffer was introduced for the developed GaN HEMT. The AlGaN/GaN hetero-structure deposited on 3 inch SiC su...
作者:Li Zhonghui , Li Guoai ...
来源:[J].Journal of Geophysics and Engineering, 2018, Vol.15 (4)IOP
摘要:To study the influence of sandstone fissure angle on its characteristics, we performed sandstone uniaxial compression experiments with different prefabricated fissure angles. The infrared radiation temperature (IRT) response characteristics of the prefabricated fissure sands...
作者:Li Zhonghui , Yu Xuming ...
来源:[J].Journal of Semiconductors, 2013, Vol.34 (6)IOP
摘要:SiN dielectrically-defined 0.15 μm field plated GaN HEMTs for millimeter-wave application have been presented. The AlGaN/GaN hetero-structure epitaxial material for HEMTs fabrication was grown on a 3-inch SiC substrate with an Fe doped GaN buffer layer by metal-organic chemi...

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