Springer期刊
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作者:Anatoly Druzhinin , Igor Ostrovskii ...
来源:[J].Nanoscale Research Letters(IF 2.524), 2017, Vol.12 (1), pp.1-7Springer
摘要:Abstract(#br)The magnetization and magnetoresistance of Si whiskers doped with to boron concentrations corresponding to the metal-insulator transition (2 × 10 18 cm −3 ÷ 5 × 10 18 cm −3 ) were measured at high magnetic fields up to 14 T in a wide temperature ran...
作者:Anatoly Druzhinin , Igor Ostrovskii ...
来源:[J].Nanoscale Research Letters(IF 2.524), 2017, Vol.12 (1), pp.1-8Springer
摘要:Abstract(#br)Temperature dependencies of GaSb whiskers’ resistance doped with Te to concentration of 1.7 × 10 18 cm −3 were measured in temperature range 1.5–300 K. At 4.2 K temperature, a sharp drop in the whisker resistance was found. The observed effect is likely con...
作者:Anatoly Druzhinin , Anatoliy Evtukh ...
来源:[J].Nanoscale Research Letters(IF 2.524), 2017, Vol.12 (1), pp.1-6Springer
摘要:Abstract(#br)This work pertains to the method for modification of silicon (Si) wafer morphology by metal-assisted chemical etching (MacEtch) technique suitable for fabrication of antireflective Si surfaces. For this purpose, we made different Au catalyst patterns on the surface o...

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