全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:Cornel Bozdog , Igor Turovets
来源:[C].SPIE Advanced Lithography2016SPIE
摘要:Optical metrology is the workhorse metrology in manufacturing and key enabler to patterning process control. Recent advances in device architecture are gradually shifting the need for process control from the lithography module to other patterning processes (etch, trim, clea...
作者:Akihiro Konda , Hiroki Yamamoto , Shusuke Yoshitake ...
来源:[C].SPIE Advanced Lithography2016SPIE
摘要:Ionizing radiations such as extreme ultraviolet (EUV) and electron beam (EB) are the most promising exposure source for next-generation lithographic technology. In the realization of high resolution lithography, it is necessary for resist materials to improve the trade-off relati...
作者:Zac Levinson , Jack S. Smith , Germain Fenger ...
来源:[C].SPIE Advanced Lithography2016SPIE
摘要:Pupil plane characterization will play a critical role in image process optimization for EUV lithography (EUVL), as it has for several lithography generations. In EUVL systems there is additional importance placed on understanding the ways that thermally-induced system drift...
作者:Taejun You , Taehyeong Lee , Gyun Yoo ...
来源:[C].SPIE Advanced Lithography2016SPIE
摘要:Controlling critical dimension (CD) of implant blocking layers during photolithography has been challenging due to reflection caused by wafer topography. Unexpected reflection which comes from wafer topography makes severe CD variation on mask patterns of implant layer. Using bot...
作者:Takahiro Kozawa , Julius J. Santillan , Toshiro Itani
来源:[C].SPIE Advanced Lithography2016SPIE
摘要:Understanding of stochastic phenomena is essential to the development of highly sensitive resist for nanofabrication. In this study, we investigated the stochastic effects in a chemically amplified resist consisting of poly(4-hydroxystyrene-co-t-butyl methacrylate), tripheny...
作者:Uwe D. Zeitner , Tina Weichelt , Yannick Bourgin ...
来源:[C].SPIE Advanced Lithography2016SPIE
摘要:Modern optical applications have special demands on the lithographic fabrication technologies. This relates to the lateral shape of the structures as well as to their three dimensional surface profile. On the other hand optical nano-structures are often periodic which allows for ...
作者:Yu-Jen Fan , Mac Mellish , Jun Sung Chun ...
来源:[C].SPIE Advanced Lithography2016SPIE
摘要:EUV lithographers have continued to reduce the barriers to high Volume Manufacturing (HVM) introduction. Tool, mask and photoresist manufacturers have made excellent progress on several fronts, including resolution of many EUV source related issues, resists for early imaging...
作者:Raja Muthinti , Nicolas Loubet , Robin Chao ...
来源:[C].SPIE Advanced Lithography2016SPIE
摘要:Gate-all-around (GAA) nanowire (NW) devices have long been acknowledged as the ultimate device from an electrostatic scaling point of view. The GAA architecture offers improved short channel effect (SCE) immunity compared to single and double gate planar, FinFET, and trigate stru...
作者:Andreas Frommhold , Alexandra McClelland , John Roth ...
来源:[C].SPIE Advanced Lithography2016SPIE
摘要:We have recently introduced a new molecular resist system that demonstrates high-resolution capability. A series of studies such as quencher choice and loading was conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm h...
作者:Roel Gronheid , Carolien Boeckx , Jan Doise ...
来源:[C].SPIE Advanced Lithography2016SPIE
摘要:In this paper, approaches are explored for combining EUV with DSA for via layer patterning at the N7 and N5 logic nodes. Simulations indicate opportunity for significant LCDU improvement at the N7 node without impacting the required exposure dose. A templated DSA process based on...

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