全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:... Kai Wang , Zhubing He , Xianqiang Li
来源:[J].Nanoscale Research Letters(IF 2.524), 2017, Vol.12 (1)Springer
摘要:Solar cells based on subwavelength-dimensions semiconductor nanowire (NW) arrays promise a comparable or better performance than their planar counterparts by taking the advantages of strong light coupling and light trapping. In this paper, we present an accurate and time-saving a...
作者:... Yongliang Li , Zhubing He , Yulong Ding
来源:[J].Applied Energy(IF 4.781), 2019, Vol.251Elsevier
摘要:Abstract(#br)Traditional air conditioning (AC) faces low energy efficiency and thermal comfort challenges. This study explores the integration of thermal energy storage (TES) containing a phase change material (PCM) with a conventional AC unit (PCM-AC) to meet the challenge....
作者:... Wenjun Liu , Kah Wee Ang , Zhubing He
来源:[J].Journal of Alloys and Compounds(IF 2.39), 2015, Vol.650, pp.502-507Elsevier
摘要:Abstract(#br)The energy band alignment between Al 2 O 3 /multilayer (ML)-MoS 2 was characterized using high-resolution x -ray photoelectron spectroscopy (XPS). The Al 2 O 3 was deposited using an atomic layer deposition (ALD) tool. A valence band offset of 4.10 eV and a conductio...
作者:... Haisheng Song , Zhubing He , Jiang Tang
来源:[J].Solar Energy Materials and Solar Cells(IF 4.63), 2016, Vol.157, pp.887-893Elsevier
摘要:Abstract(#br)Compact thin film of antimony sulfide (Sb 2 S 3 ) as a promising absorber layer was obtained by rapid thermal evaporation (RTE) rather than conventional chemical bath deposition or atomic layer deposition based methods. The systematical characterizations of Sb 2 S 3 ...
作者:Zhubing He , Yanling Liu ...
来源:[J].Small(IF 7.823), 2016, Vol.12 (3), pp.397-404Wiley
摘要:Wide‐range, well‐separated, and tunable lifetime nanocomposites with ultrabright fluorescence are highly desirable for applications in optical multiplexing such as multiplexed biological detection, data storage, and security printing. Here, a synthesis of tunable fluorescenc...
作者:... Jin‐Ping Ao , Kah‐Wee Ang , Zhubing He
来源:[J].Advanced Functional Materials(IF 9.765), 2017, Vol.27 (13), pp.n/a-n/aWiley
摘要:Monolayer W x Mo1− x S2‐based field effect transistors are demonstrated for the first time on the monolayer W x Mo1− x S2 flake, which is grown by the chemical vapor deposition method under an atmospheric...

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