全部文献期刊会议图书|学者科研项目
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作者:Z. Galloway , C. Gee ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2019, Vol.923, pp.5-7
摘要:Abstract(#br)The recent development of silicon diode Low Gain Avalanche Detectors (LGADs) has opened the possibility of enhanced response and faster frame rates for the detection of X-rays produced by next-generation light sources. Preliminary results are presented on the ex...
作者:Z. Galloway , V. Fadeyev ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2019, Vol.940, pp.19-29
摘要:Abstract(#br)In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15 and 6e15 neq/cm 2 . The UFSD used in this study are circular 50 μ m thick Low-Gain Avalanche Detectors (LGAD)...
作者:Z. Galloway , M. Mandurrino ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2018
摘要:Abstract(#br)In this paper, we report on the radiation resistance of 50-micron thick Low Gain Avalanche Diodes (LGAD) manufactured at the Fondazione Bruno Kessler (FBK) employing different dopings in the gain layer. LGADs with a gain layer made of Boron, Boron low-diffusion,...
作者:Z. Galloway , S. Grinstein ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2018, Vol.891, pp.68-77
摘要:Abstract(#br)Low Gain Avalanche Detectors (LGAD) are based on a n + + -p + -p-p + + structure where an appropriate doping of the multiplication layer (p + ) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve t...
作者:Z. Galloway , A. Ghassemi ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2018, Vol.895, pp.158-172
摘要:Abstract(#br)In this paper we report measurements of the uniformity of time resolution, signal amplitude, and charged particle detection efficiency across the sensor surface of low-gain avalanche detectors (LGAD). Comparisons of the performance of sensors with different dopi...
作者:Z. Galloway , S. Garbolino ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2017, Vol.845, pp.47-51
摘要:Abstract(#br)In this contribution we will review the progresses toward the construction of a tracking system able to measure the passage of charged particles with a combined precision of ∼10 ps and ∼10 μm, either using a single type of sensor, able to concurrently measu...
作者:Z. Galloway , S. Grinstein ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2018, Vol.898, pp.53-59
摘要:Abstract(#br)Low Gain Avalanche Detectors (LGADs) are based on a n + + -p + -p-p + + structure where appropriate doping of multiplication layer (p + ) leads to high enough electric fields for impact ionization. Operation of these detectors in harsh radiation environments leads to...
作者:Z. Galloway , S. Hidalgo ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2019, Vol.924, pp.373-379
摘要:Abstract(#br)LGAD detectors on 300 μ m thick high resistivity p-type substrates were proposed for the first time by IMB-CNM-CSIC. They are customized Avalanche Photodiodes (APD) to obtain a high electric field region confined close to t...
作者:Z. Galloway , C. Gay ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2019, Vol.924, pp.214-218
摘要:Abstract(#br)Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detecto...
作者:Z. Galloway , C. Gee ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2019, Vol.924, pp.387-393
摘要:Abstract(#br)We report results from the testing of 35 μ m thick Ultra-Fast Silicon Detectors (UFSD) produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported in a previous paper on 50 μ m thick UFSD produced by HPK. The 35 μ m thic...

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