全部文献期刊会议图书|学者科研项目
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作者:Yuichiro Tokuda , Emi Makino ...
来源:[J].Journal of Crystal Growth(IF 1.552), 2017, Vol.478, pp.9-16
摘要:Abstract(#br)Fast growth of n-type 4H-SiC crystals was attempted using a high-temperature gas-source method. High growth rates exceeding 9 mm/h were archived at a seed temperature of 2550 °C, although the formation of macro-step bunching caused doping fluctuation and voids i...
作者:Yuichiro Tokuda , Emi Makino ...
来源:[J].Journal of Crystal Growth(IF 1.552), 2016, Vol.448, pp.29-35
摘要:Abstract(#br)We investigate growth conditions to obtain high-quality SiC bulk crystals by the High-Temperature Chemical Vapor Deposition (HTCVD) method. Formation of dendrite crystals, which sometimes occurs on the growth front and degrades the material quality, is raised as...
作者:Yuichiro Tokuda , Yoshiharu Matsubara ...
来源:[J].Tetrahedron Letters(IF 2.397), 1995, Vol.36 (41), pp.7483-7486
摘要:Abstract(#br)Anodic oxidation of enol ethers 1 in methanol containing sodium azide using a divided cell brought about facile and regioselective azidomethoxylation to give the corresponding acetals 2 of α-azido carbonyl compounds in good yields.
作者:Yuichiro Tokuda , Hirofumi Maekawa ...
来源:[J].Tetrahedron(IF 2.803), 1996, Vol.52 (11), pp.3889-3896
摘要:Abstract(#br)Direct monohydroxylation of benzene and substituted benzenes was successfully performed by anodic oxidation to form the corresponding phenol derivatives in good yields. The anodic oxidation was generally carried out in a mixed solvent of trifluoroacetic acid and dich...
作者:Yuichiro Tokuda , Junya Sakai
来源:[J].Phosphorus, Sulfur, and Silicon and the Related Elements(IF 0.601), 2014, Vol.189 (6), pp.778-790
摘要:Abstract(#br)Dimethyl 1,1-bis(trimethylsilyl)methylphosphonate and dimethyl 1-(trimethylsilyl)-1-(trimethylstannyl)methylphosphonate were succeeded to react with aromatic aldehydes in the presence of methyl benzoate as additive to give the corresponding vinylphosphonates in moder...
作者:Yuichiro Tokuda , Hideyuki Uehigashi ...
来源:[J].Japanese Journal of Applied Physics, 2020, Vol.59 (SG)
摘要:The device performance of 4H-SiC PiN diodes fabricated on a substrate produced by the HTCVD method was studied. A high-quality HTCVD substrate with a diameter of 3 in. was prepared as a specimen and fundamental PiN diodes were fabricated on the substrate. We confirmed that t...
作者:Yuichiro Tokuda , Yoshiharu Matsubara ...
来源:[J].Synlett(IF 2.655), 1995, Vol.1995 (6), pp.661-662
摘要:Anodic oxidation of benzene in a mixed solvent of CF 3 COOH and CH 2 Cl 2 followed by usual work-up using water brought about selective monohydroxylation to give phenol in a 73% yield.
作者:Yuichiro Tokuda , Gosuke Ohashi
来源:[J].The Journal of The Institute of Image Information and Television Engineers, 2009, Vol.63 (10), pp.1447-1452
摘要:Japan's largest platform for academic e-journals: J-STAGE is a full text database for reviewed academic papers published by Japanese societies
作者:Yuichiro Tokuda , Emi Makino ...
来源:[J].Materials Science Forum, 2018, Vol.4496, pp.180-183
摘要:Synchrotron X-ray topography was carried out for 4H-SiC crystals grown by high-temperature gas source method, and transmission topography analysis with g= or 0004 was carried out for the cross-sectional samples. Dislocation contrasts extended in the growth direction were observed...

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