全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:... Atsushi Ogura , Yoshio Ohshita , Atsushi Masuda
来源:[J].Solar Energy(IF 2.952), 2019, Vol.188, pp.1292-1297Elsevier
摘要:Abstract(#br)Sodium (Na) and lithium (Li) in the silver (Ag) paste cause the potential-induced degradation (PID), while the PID of p-type crystalline silicon (Si) photovoltaic modules is caused by Na in the front cover glass. Some Ag pastes contain these elements to control the f...
作者:Yoshio Ohshita , Atsushi Ogura
来源:[J].Current Applied Physics(IF 1.814), 2018Elsevier
摘要:Abstract(#br)We have investigated the effects of chemical rounding (CR) on the surface passivation and/or antireflection performance of AlO x - and AlO x /SiN x :H stack-passivated pyramid textured p + -emitters with two different boron doping concentrations, and on the perf...
作者:... Nobuaki Kojima , Yoshio Ohshita , Masafumi Yamaguchi
来源:[J].Journal of Crystal Growth(IF 1.552), 2016Elsevier
摘要:Abstract(#br)The N–H related defects at 3124 cm -1 are found to be acceptors in GaAsN grown by chemical beam epitaxy (CBE), by comparing the concentrations of N–H defects with those of acceptors as a function of annealing condition. The vibrations of N–H defects appear ...
作者:... Nobuaki Kojima , Yoshio Ohshita , Masafumi Yamaguchi
来源:[J].Journal of Alloys and Compounds(IF 2.39), 2015, Vol.649, pp.815-818Elsevier
摘要:Abstract(#br)The N–H related acceptor defects in GaAsN grown by chemical beam epitaxy (CBE) are studied by hydrogen isotopes, H and D. When the films are grown by a conventional arsenic source, deep level transient spectroscopy (DLTS) reveals two energy levels at 0.11 and 0....
作者:... Nobuaki Kojima , Yoshio Ohshita , Masafumi Yamaguchi
来源:[J].Journal of Crystal Growth(IF 1.552), 2015, Vol.432, pp.45-48Elsevier
摘要:Abstract(#br)The properties of the acceptor states in GaAsN grown by chemical beam epitaxy (CBE) are studied by analyzing their charges based on the Poole–Frenkel model. Deep level transient spectroscopy (DLTS) shows two acceptor levels at 0.11 and 0.19 eV above the valence ...
作者:Yoshio Ohshita , Ichiro Hirosawa
来源:[J].Journal of Crystal Growth(IF 1.552), 2016Elsevier
摘要:Abstract(#br)In this paper, we propose a new method of using H 2 supply in the atmosphere to increase Sn concentration in a Ge 1−x Sn x film epitaxially grown on a Ge substrate using MOCVD (metal organic chemical vapor deposition). H 2 supplied in the atmosphere accelerates ...
作者:... Hidetoshi Suzuki , Yoshio Ohshita , Masafumi Yamaguchi
来源:[J].Journal of Crystal Growth(IF 1.552), 2015, Vol.425, pp.13-15Elsevier
摘要:Abstract(#br)In situ three-dimensional X-ray reciprocal space mapping ( in situ 3D-RSM) was employed for studying molecular beam epitaxial (MBE) growth of InGaAs multilayer structures on GaAs(0 0 1). Measuring the symmetric 004 diffraction allowed us to separately obtain film pro...
作者:... Changzeng Fan , Yoshio Ohshita , Masafumi Yamaguchi
来源:[J].Journal of Alloys and Compounds(IF 2.39), 2016, Vol.687, pp.42-46Elsevier
摘要:Abstract(#br)The growth orientation dependence of N incorporation on traditional (100) and high-index GaAs (311)A/B planes has been investigated by the first principle calculation and experimental measurement. Due to the electronegativity and atomic radius differences between As ...
作者:... Nobuaki Kojima , Yoshio Ohshita , Masafumi Yamaguchi
来源:[J].Journal of Crystal Growth(IF 1.552), 2016, Vol.437, pp.6-9Elsevier
摘要:Abstract(#br)In this paper, the Chemical Beam Epitaxy approach to GaAsN material growth has been investigated. Photoluminescence and Hall effect measurements were performed to clarify the influence of defects on the transport properties, those of holes in particular. The PL ...
作者:... Xin Gao , Yoshio Ohshita , Masafumi Yamaguchi
来源:[J].Journal of Alloys and Compounds(IF 2.39), 2016, Vol.657, pp.325-329Elsevier
摘要:Abstract(#br)The contact behavior of Cu on n-type GaAsN, grown on (100) and (311)A/B GaAs substrates by chemical beam epitaxy, has been investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements. Both N incorporation and growth orientation are foun...

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