全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:V. Fadeyev , P. Freeman ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2019, Vol.940, pp.19-29Elsevier
摘要:Abstract(#br)In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15 and 6e15 neq/cm 2 . The UFSD used in this study are circular 50 μ m thick Low-Gain Avalanche Detectors (LGAD)...
作者:V. Fadeyev , S. Ely ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2014, Vol.765, pp.59-63Elsevier
摘要:Abstract(#br)We pursue scribe–cleave–passivate (SCP) technology for making “slim edge” sensors. The goal is to reduce the inactive region at the periphery of the devices while maintaining their performance. In this paper we report on two aspects of the current efforts. ...
作者:V. Fadeyev , Z. Galloway ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2016, Vol.831, pp.189-196Elsevier
摘要:Abstract(#br)ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less materi...
作者:V. Fadeyev , J. Lange ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2018, Vol.898, pp.53-59Elsevier
摘要:Abstract(#br)Low Gain Avalanche Detectors (LGADs) are based on a n + + -p + -p-p + + structure where appropriate doping of multiplication layer (p + ) leads to high enough electric fields for impact ionization. Operation of these detectors in harsh radiation environments leads to...
作者:V. Fadeyev , Z. Galloway ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2016Elsevier
摘要:Abstract(#br)In this contribution we will review the progresses toward the construction of a tracking system able to measure the passage of charged particles with a combined precision of ∼10 ps and ∼10 μm, either using a single type of sensor, able to concurrently measu...
作者:V. Fadeyev , P. Fernández-Martínez ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2016, Vol.831, pp.24-28Elsevier
摘要:Abstract(#br)This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, co...
作者:V. Fadeyev , P. Freeman ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2016, Vol.831, pp.18-23Elsevier
摘要:Abstract(#br)We report on measurements on Ultra-Fast Silicon Detectors (UFSD) which are based on Low-Gain Avalanche Detectors (LGAD). They are n-on-p sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction...
作者:V. Fadeyev , Z. Galloway ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2016, Vol.831, pp.156-160Elsevier
摘要:Abstract(#br)This paper focuses on the performance of analog readout electronics (built-in amplifier) integrated on the high-voltage (HV) CMOS silicon sensor chip, as well as its radiation hardness. Since the total collected charge from minimum ionizing particle (MIP) for th...
作者:V. Fadeyev , J. Wortman ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2014, Vol.765, pp.252-257Elsevier
摘要:Abstract(#br)AC-coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently ...

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