全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:... Tomás Palacios , Taiichi Otsuji , Tetsuya Suemitsu
来源:[J].Solid State Electronics(IF 1.482), 2014, Vol.101, pp.63-69Elsevier
摘要:Abstract(#br)We report a new fabrication process to realize a slant field plate – a field plate in which the plate-to-channel distance gradually increases with the distance from the gate edge – using a multi-layer SiCN film. AlGaN/GaN HEMTs with several types of field plates...
作者:Tetsuya Suemitsu , Victor Ryzhii ...
来源:[J].Solid State Electronics(IF 1.482), 2015, Vol.103, pp.216-221Elsevier
摘要:Abstract(#br)We report on photonic frequency double-mixing conversion utilizing a graphene-channel FET (G-FET). Optoelectronic properties of graphene are exploited to perform single-chip photonic double-mixing functionality, which is greatly advantageous in future broadband ...
作者:... Kengo Kobayashi , Taiichi Otsuji , Tetsuya Suemitsu
来源:[J].Solid State Electronics(IF 1.482), 2014, Vol.102, pp.93-97Elsevier
摘要:Abstract(#br)The impact of the stem height of T-gate electrodes on the parasitic gate delay time in InGaAs high electron mobility transistors (HEMTs) is studied. Since T-gates with higher stem height make the parasitic gate capacitance smaller, the higher stem height is expected ...
作者:Tetsuya Suemitsu , Maki Suemitsu ...
来源:[J].Journal of Infrared, Millimeter, and Terahertz Waves(IF 1.12), 2011, Vol.32 (5), pp.629-645Springer
摘要:Abstract(#br)This paper reviews recent advances in emission of terahertz radiation from two-dimensional (2D) electron systems in semiconductor nano-heterostructures. 2D plasmon resonance is first presented to demonstrate intense broadband terahertz emission from InGaP/InGaAs...
作者:... Maki Suemitsu , Tetsuya Suemitsu , Taiichi Otsuji
来源:[J].Diamond & Related Materials(IF 1.709), 2012, Vol.22, pp.118-123Elsevier
摘要:Abstract(#br)A carbonaceous field effect transistor, designated as a ‘DLC-GFET’, consisting of a graphene channel and a diamondlike carbon (DLC) top-gate dielectric film was fabricated. A DLC film was formed ‘directly’ onto the graphene channel using our original photoe...
作者:... Seiji Samukawa , Taiichi Otsuji , Tetsuya Suemitsu
来源:[J].physica status solidi (a)(IF 1.469), 2017, Vol.214 (3), pp.n/a-n/aWiley
摘要:In this article, we report a suppression of leakage current and an improvement of isolation breakdown voltage on GaN‐based high electron mobility transistors (HEMTs) by means of neutral beam (NB) etching. The plasma damage during dry etching process is one of the key reasons...
作者:Tetsuya Suemitsu
来源:[J].Thin Solid Films(IF 1.604), 2006, Vol.515 (10), pp.4378-4383Elsevier
摘要:Abstract(#br)The current understanding of reliability issues for InP HEMTs is reviewed. To date, the origin of some instability and degradation phenomena have been identified and the solutions to eliminate or mitigate them have been found. On the other hand, some degradation phen...
作者:Tetsuya Suemitsu , Yoshino K Fukai ...
来源:[J].Microelectronics Reliability(IF 1.137), 2002, Vol.42 (1), pp.47-52Elsevier
摘要:Abstract(#br)The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate el...

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