全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:Szu-Hao Chen , Po-Chien Chou , Stone Cheng
来源:[J].Journal of Thermal Analysis and Calorimetry(IF 1.982), 2017, Vol.129 (2), pp.1159-1168Springer
摘要:A GaN-based power device is a superior component for high-frequency and high-efficiency applications and especially for applications that involve megahertz power conversion. In this work, a fast process of static thermal resistance ( R th) and transient thermal im...
作者:Po-Chien Chou , Yu-Cheng Lin , Stone Cheng
来源:[J].Sensors(IF 1.953), 2011, Vol.11 (5), pp.4808DOAJ
摘要:Technological obstacles to the use of rotary-type swing arm actuators to actuate optical pickup modules in small-form-factor (SFF) disk drives stem from a hinge’s skewed actuation, subsequently inducing off-axis aberrations and deteriorating optical quality. This work descri...
作者:Stone Cheng , Jesús A. del Alamo
来源:[J].Energies(IF 1.844), 2017, Vol.10 (2)DOAJ
摘要:This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N ba...
作者:Po-Chien Chou , Stone Cheng , Yu-Cheng Lin
来源:[J].Sensors(IF 1.953), 2011, Vol.11 (5), pp.4808-4829DOAJ
摘要:Technological obstacles to the use of rotary-type swing arm actuators to actuate optical pickup modules in small-form-factor (SFF) disk drives stem from a hinge’s skewed actuation, subsequently inducing off-axis aberrations and deteriorating optical quality. This work descri...
作者:Stone Cheng , Po-Chien Chou
来源:[J].International Journal of Thermal Sciences(IF 2.47), 2013, Vol.66, pp.63-70Elsevier
摘要:Abstract(#br)This study describes the development of packaging for high-power AlGaN/GaN high electron mobility transistors (HEMTs) on a silicon substrate. A transistor is attached to a V-grooved copper base, and mounted on a TO-3P lead-frame. Unlike flipchip or copper-molybd...
作者:Stone Cheng , Chia-Hsiang Cheng
来源:[J].Materials Science in Semiconductor Processing(IF 1.338), 2016, Vol.41, pp.304-311Elsevier
摘要:Abstract(#br)This study investigates the heat generation behavior of packaged normally-on multi-finger AlGaN/GaN high electron mobility transistors (HEMTs) that are cascoded with a low-voltage MOSFET (LVMOS) and a SiC Schottky barrier diode (SBD). By foremost carrying out el...
作者:Po-Chien Chou , Stone Cheng , Szu-Hao Chen
来源:[J].Applied Thermal Engineering(IF 2.127), 2014, Vol.70 (1), pp.593-599Elsevier
摘要:Abstract(#br)This work presents an extensive thermal characterization of a single discrete GaN high-electron-mobility transistor (HEMT) device when operated in parallel at temperatures of 25 °C–175 °C. The maximum drain current ( I D max ), on-resistance ( R ON ), pinch-off ...
作者:Szu-Hao Chen , Po-Chien Chou , Stone Cheng
来源:[J].Applied Thermal Engineering(IF 2.127), 2016, Vol.98, pp.1003-1012Elsevier
摘要:Abstract(#br)In this investigation, thermal transient measurements and analyses are used to study the thermal performance of a cascoded GaN power device. The method is based on the thermal characterization of the on-resistance ( R on ) of the device and the synchronized curr...
作者:Stone Cheng , Po-Chien Chou ...
来源:[J].Applied Thermal Engineering(IF 2.127), 2013, Vol.51 (1-2), pp.20-24Elsevier
摘要:Abstract(#br)This work presents a technology for packaging AlGaN/GaN high electron mobility transistors (HEMTs) on a Si substrate. The GaN HEMTs are attached to a V-groove copper base and mounted on a TO-3P leadframe. The various thermal paths from the GaN gate junction to t...
作者:Po-Chien Chou , Stone Cheng
来源:[J].Applied Thermal Engineering(IF 2.127), 2013, Vol.61 (2), pp.20-27Elsevier
摘要:Abstract(#br)Emerging gallium nitride (GaN)-based high electron mobility transistor (HEMT) technology has the potential to make lower loss and higher power switching characteristics than those made using traditional silicon (Si) components. This work designed, developed, and...

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