全部文献期刊会议图书|学者科研项目
中外文文献  中文文献  外文文献
作者:Sreedevi Gedi , Salh Alhammadi ...
来源:[J].Applied Surface Science(IF 2.112), 2020, Vol.510
摘要:Abstract(#br)The present study demonstrates the surface passivation of Cu(In,Ga)Se 2 (CIGS) photovoltaic absorbers using a thin In 2 S 3 layer and its effect on the performance of the CIGS device. Two types of CIGS samples with different surface roughness values prepared by ...
作者:Sreedevi Gedi , Vasudeva Reddy Minnam Reddy ...
来源:[J].Applied Surface Science(IF 2.112), 2017, Vol.402, pp.463-468
摘要:Abstract(#br)Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatmen...
作者:Sreedevi Gedi , Vasudeva Reddy Minnam Reddy ...
来源:[J].Applied Surface Science(IF 2.112), 2019, Vol.465, pp.802-815
摘要:Abstract(#br)SnS thin films were prepared by chemical bath deposition using an environmentally friendly and economic complexing agent, tartaric acid (C 4 H 6 O 6 ) with different concentrations. X-ray diffraction analysis confirmed that all the deposited films exhibited poly...
作者:Sreedevi Gedi , Vasudeva Reddy Minnam Reddy ...
来源:[J].Solar Energy(IF 2.952), 2019, Vol.184, pp.305-314
摘要:Abstract(#br)In this paper, studies on the photovoltaic performance of the orthorhombic SnS device with respect to bath temperature are reported. Firstly, the effect of bath temperature on the physical properties of SnS layers was analyzed using appropriate characterization ...
作者:Sreedevi Gedi , Vasudeva Reddy Minnam Reddy ...
来源:[J].Ceramics International(IF 1.789), 2017, Vol.43 (4), pp.3713-3719
摘要:Abstract(#br)Tin disulfide (SnS 2 ) is a simple binary metal chalcogenide and it has been proposed as a promising buffer material for Cd-free thin film solar cells. The present work explores the deposition of SnS 2 films by a facile chemical bath deposition at different depo...
作者:Sreedevi Gedi , K.T. Ramakrishna Reddy ...
来源:[J].Journal of Alloys and Compounds(IF 2.39), 2019, Vol.806, pp.410-417
摘要:Abstract(#br)Earth-abundant tin monosulfide (SnS) thin films have attracted considerable interest for eco-friendly and low-cost thin film solar cells. However, less attention has been paid on the fabrication of SnS solar cell by the industrial processes. In view of that the ...
作者:... Vasudeva Reddy Minnam Reddy , Sreedevi Gedi , Chinho Park
来源:[J].Solar Energy(IF 2.952), 2019, Vol.188, pp.209-217
摘要:Abstract(#br)In this study, monoclinic (M)-Cu 2 SnS 3 (CTS) thin films were prepared by high vacuum (10 Pa) rapid thermal sulfurization of sputtered Cu/Sn/Cu metallic layers. The effect of sulfurization time (1 min, 5 min, 10 min, and 20 min) on the crystal structure, morpho...
作者:Phaneendra Reddy Guddeti , Sreedevi Gedi , K.T. Ramakrishna Reddy
来源:[J].Materials Science in Semiconductor Processing(IF 1.338), 2018, Vol.86, pp.164-172
摘要:Abstract(#br)Cu 2 SnS 3 (CTS) is a promising absorber for thin film solar cells because of its suitable opto-electronic properties. This article reports the effect of sulfurization temperature ( T s ) on the physical properties of CTS thin films deposited by two-stage proces...
作者:Sreedevi Gedi , Yu Jin Song
来源:[J].Journal of Alloys and Compounds(IF 2.39), 2018, Vol.748, pp.188-192
摘要:Abstract(#br)Earth-abundant and low-toxic Cu 2 ZnSnSe 4 (CZTSe) kesterite-compound semiconducting absorbers were deposited on bare Mo(600 nm) and Mo(10 nm)/MoN(50 nm)/Mo(600 nm) substrates using a two-stage selenization process. The effects of the MoN barrier on the properties of...
作者:Sreedevi Gedi , Tulasi Ramakrishna Reddy Kotte ...
来源:[J].Solar Energy Materials and Solar Cells(IF 4.63), 2018, Vol.176, pp.251-258
摘要:Abstract(#br)The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric press...

我们正在为您处理中,这可能需要一些时间,请稍等。

资源合作:cnki.scholar@cnki.net, +86-10-82896619   意见反馈:scholar@cnki.net

×