全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:Nobuaki Kojima , Yoshio Ohshita
来源:[J].Journal of Crystal Growth(IF 1.552), 2016Elsevier
摘要:Abstract(#br)The N–H related defects at 3124 cm -1 are found to be acceptors in GaAsN grown by chemical beam epitaxy (CBE), by comparing the concentrations of N–H defects with those of acceptors as a function of annealing condition. The vibrations of N–H defects appear ...
作者:Nobuaki Kojima , Yoshio Ohshita
来源:[J].Journal of Alloys and Compounds(IF 2.39), 2015, Vol.649, pp.815-818Elsevier
摘要:Abstract(#br)The N–H related acceptor defects in GaAsN grown by chemical beam epitaxy (CBE) are studied by hydrogen isotopes, H and D. When the films are grown by a conventional arsenic source, deep level transient spectroscopy (DLTS) reveals two energy levels at 0.11 and 0....
作者:Nobuaki Kojima , Yoshio Ohshita
来源:[J].Journal of Crystal Growth(IF 1.552), 2015, Vol.432, pp.45-48Elsevier
摘要:Abstract(#br)The properties of the acceptor states in GaAsN grown by chemical beam epitaxy (CBE) are studied by analyzing their charges based on the Poole–Frenkel model. Deep level transient spectroscopy (DLTS) shows two acceptor levels at 0.11 and 0.19 eV above the valence ...
作者:Nobuaki Kojima , Yoshio Ohshita
来源:[J].Journal of Crystal Growth(IF 1.552), 2016, Vol.437, pp.6-9Elsevier
摘要:Abstract(#br)In this paper, the Chemical Beam Epitaxy approach to GaAsN material growth has been investigated. Photoluminescence and Hall effect measurements were performed to clarify the influence of defects on the transport properties, those of holes in particular. The PL ...
作者:Nobuaki Kojima , Yoshio Ohshita
来源:[J].Journal of Crystal Growth(IF 1.552), 2016Elsevier
摘要:Abstract(#br)The N–H related defects at 3124 cm -1 are found to be acceptors in GaAsN grown by chemical beam epitaxy (CBE), by comparing the concentrations of N–H defects with those of acceptors as a function of annealing condition. The vibrations of N–H defects appear ...
作者:Nobuaki Kojima , Yoshio Ohshita
来源:[J].Journal of Crystal Growth(IF 1.552), 2016, Vol.437, pp.6-9Elsevier
摘要:Abstract(#br)In this paper, the Chemical Beam Epitaxy approach to GaAsN material growth has been investigated. Photoluminescence and Hall effect measurements were performed to clarify the influence of defects on the transport properties, those of holes in particular. The PL ...
作者:Nobuaki Kojima , Yoshio Ohshita
来源:[J].Current Applied Physics(IF 1.814), 2013, Vol.13 (7), pp.1269-1274Elsevier
摘要:Abstract(#br)Deep level transient spectroscopy (DLTS) was deployed to study the evolution, upon electron irradiation and hydrogenation of GaAsN grown by chemical beam epitaxy, of the main nitrogen-related nonradiative recombination center (E1), localized at 0.33 eV below the...
作者:Nobuaki Kojima , Yoshio Ohshita
来源:[J].Journal of Alloys and Compounds(IF 2.39), 2013, Vol.552, pp.469-474Elsevier
摘要:Abstract(#br)The temperature dependence of capacitance–voltage ( C – V ) and current voltage ( I – V ) characteristics were used to study the cause of high background doping and the underlying current transport mechanisms in GaAsN Schottky diode grown by chemical beam e...
作者:Nobuaki Kojima , Kei Sato ...
来源:[J].Journal of Crystal Growth(IF 1.552), 1995, Vol.150, pp.1175-1179Elsevier
摘要:Abstract(#br)We have successfully grown GaSe films on (001)GaAs by molecular beam epitaxy (MBE). Each unit layer of GaSe was grown toward the two directions on (001)GaAs, while the epitaxial GaSe films whose c -axis inclined toward the only one direction were obtained by usi...
作者:Nobuaki Kojima , Yusuke Sugiura , Masafumi Yamaguchi
来源:[J].Solar Energy Materials and Solar Cells(IF 4.63), 2006, Vol.90 (18), pp.3394-3398Elsevier
摘要:Abstract(#br)C 60 /amorphous carbon superlattice structures were fabricated by shutter-controlled molecular beam deposition. The periodic structure of resulted films was confirmed by X-ray diffraction measurements. From the UV–vis reflectance/transmittance measurements, the ...

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