全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:Mayank T. Bulsara , Eugene A. Fitzgerald ...
来源:[J].Nano Lett., 2013, Vol.13 (9), pp.3973鈥?977ACS
摘要:†Department of Mechanical Engineering, ‡Department of Chemistry, and §Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States ... Due to their decreased thermal conductivities, SLs are an impo...
作者:... Tim Milakovich , Mayank T. Bulsara , Eugene A. Fitzgerald
来源:[J].Progress in Photovoltaics: Research and Applications(IF 7.712), 2017, Vol.25 (4), pp.327-332Wiley
摘要:Abstract(#br)We report the performance of a 1 eV GaNAsSb photovoltaic cell grown on Si/Si–Ge substrate using molecular beam epitaxy at different growth temperatures. The sample grown at 420°C showed the highest energy conversion efficiency, with a short circuit current of 18...
作者:Mayank T. Bulsara , Kenneth E. Lee
来源:[J].Journal of Crystal Growth(IF 1.552), 2011, Vol.324 (1), pp.103-109Elsevier
摘要:Abstract(#br)Two approaches for metalorganic chemical vapor deposition (MOCVD)-grown compositionally graded metamorphic buffers on 6° offcut bulk GaAs were investigated. The first approach consisted of tandem graded layers of InGaAs and InGaP with compositional grading of th...

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