全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:M. Barozzi , M. Boscardin ...
来源:[J].2019, Vol.919, pp.16-26Elsevier
作者:M. Barozzi , S. Morandi ...
来源:[J].Sensors and Actuators: B. Chemical(IF 3.535), 2020, Vol.305Elsevier
摘要:Abstract(#br)Silicon carbide is a well-known material with high thermal, mechanical and chemical stability. These properties have allowed, over time, its wide use as an inert material to be employed as a substrate or support in different applications. In this work, we demons...
作者:... D. Giubertoni , S. Gennaro , M. Barozzi
来源:[J].Microelectronic Engineering(IF 1.224), 2011, Vol.88 (3), pp.254-261Elsevier
摘要:Abstract(#br)In this work we demonstrate the fabrication and characterization of high performance junction diodes using annealing temperatures within the temperature range of 300–350 °C. The low temperature dopant activation was assisted by a 50 nm platinum layer which trans...
作者:M. Barozzi , D. Gabellone ...
来源:[J].Fatigue & Fracture of Engineering Materials & Structures(IF 0.861), 2017, Vol.40 (9), pp.1459-1471Wiley
摘要:Abstract(#br)The scope of this study is to characterize the mechanical properties of a novel Transformation‐Induced Plasticity bainitic steel grade TBC700Y980T. For this purpose, tensile tests are carried out with loading direction 0, 45 and 90° with respect to the L rolling...
作者:M. Barozzi , D. Giubertoni ...
来源:[J].Applied Surface Science(IF 2.112), 2006, Vol.252 (19), pp.7286-7289Elsevier
摘要:Abstract(#br)High concentration dopant distributions in silicon like those required to form ultra shallow junctions can affect SIMS analyses introducing matrix effects on secondary ions, otherwise not observed in more dilute regimes. In this work the effect of high arsenic concen...
作者:M. Barozzi , D. Giubertoni ...
来源:[J].Applied Surface Science(IF 2.112), 2004, Vol.231, pp.632-635Elsevier
摘要:Abstract(#br)In the present work the effect induced by a thin silicon oxide and its interface with silicon on the quantification of ultra-shallow arsenic distributions measured by secondary ion mass spectrometry (SIMS) has been studied. Three As implants on a 11 nm SiO 2 /Si...
作者:M. Barozzi , D. Giubertoni ...
来源:[J].Applied Surface Science(IF 2.112), 2004, Vol.231, pp.768-771Elsevier
摘要:Abstract(#br)The higher degree of instrumental automation becomes increasingly important in order to reduce the operator attendance for SIMS analyses. Concurrently a high repeatability is demanded from these instruments to guarantee process reproducibility or material uniformity....
作者:M. Barozzi , D. Giubertoni ...
来源:[J].Applied Surface Science(IF 2.112), 2004, Vol.231, pp.959-961Elsevier
摘要:Abstract(#br)In most cases sufficient sample quantity is available to cut the sample to fit the available window size of SIMS sample holders. However, in cases where only a small amount of material is available analysis of small ( 1 mm ×1 mm) samples is required. Some typi...
作者:M. Barozzi , S. Pederzoli ...
来源:[J].Applied Surface Science(IF 2.112), 2006, Vol.252 (19), pp.7214-7217Elsevier
摘要:Abstract(#br)SIMS and medium energy ion scattering (MEIS) have been applied to the characterization of ultra shallow distribution of arsenic in silicon obtained by ion implantation at 1 and 3 keV and successive annealing at low temperature (lower than 700 °C). In case of hea...

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