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作者:L. Pancheri , C. Oton
来源:[J].Sensors(IF 1.953), 2002, Vol.2 (3), pp.121DOAJ
摘要:We investigated the possibility of using several sensing parameters from porous silicon in order to improve gas selectivity. By fabricating porous silicon optical microcavities, three independent quantities can be measured, i.e. the electrical conductance, the photoluminescence i...
作者:L. Pancheri , Z. Gaburro ...
来源:[J].Sensors(IF 1.953), 2002, Vol.2 (3), pp.121-126DOAJ
摘要:We investigated the possibility of using several sensing parameters from porous silicon in order to improve gas selectivity. By fabricating porous silicon optical microcavities, three independent quantities can be measured, i.e. the electrical conductance, the photoluminescence i...
作者:L. Pancheri , G. Paternoster ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2020, Vol.959Elsevier
摘要:Abstract(#br)In this paper we present the numerical simulation of silicon detectors with internal gain as the main tool for 4-dimensional (4D) particle trackers design and optimization. The Low-Gain Avalanche Diode (LGAD) technology and its present limitations are reviewed with t...
作者:L. Pancheri , L. Ratti ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2020, Vol.958Elsevier
摘要:Abstract(#br)In this paper we present a position-sensitive detector based on the vertical integration of pairs of aligned pixels operating in Geiger-mode regime and designed for charged particle detection. This novel device exploits the coincidence between two simultaneous a...
作者:L. Pancheri , P. Brogi ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2017, Vol.845, pp.143-146Elsevier
摘要:Abstract(#br)In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between t...
作者:L. Pancheri , H-F W. Sadrozinski ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2018Elsevier
摘要:Abstract(#br)In this paper, we report on the radiation resistance of 50-micron thick Low Gain Avalanche Diodes (LGAD) manufactured at the Fondazione Bruno Kessler (FBK) employing different dopings in the gain layer. LGADs with a gain layer made of Boron, Boron low-diffusion,...
作者:L. Pancheri , L. Ratti ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2018Elsevier
摘要:Abstract(#br)An array of Single Photon Avalanche Diodes (SPAD), fabricated in a 180 nm CMOS technology featuring a high voltage (HV) option, has been investigated in terms of radiation tolerance, in view of the design of low material budget dual-tier detectors for charged pa...
作者:L. Pancheri , G.F. Dalla Betta
来源:[J].Optical Materials(IF 1.918), 2019, Vol.88, pp.271-276Elsevier
摘要:Abstract(#br)The growing interest on the use of colloidal Quantum Dots (QDs) in scintillation and dosimetry applications in comparison with organic fluorophores relies in their narrower and tunable photoluminescence (PL) emission, easier chemical processability and higher cr...
作者:L. Pancheri , G. Paternoster ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2017, Vol.845, pp.47-51Elsevier
摘要:Abstract(#br)In this contribution we will review the progresses toward the construction of a tracking system able to measure the passage of charged particles with a combined precision of ∼10 ps and ∼10 μm, either using a single type of sensor, able to concurrently measu...
作者:L. Pancheri , G.F. Dalla Betta
来源:[J].Nuclear Inst. and Methods in Physics Research, B(IF 1.266), 2018Elsevier
摘要:Abstract(#br)Semiconductor quantum dots (QDs) are receiving increasing interest for the production of scintillator detectors and dosimeters. For this reason, the investigation of the effects of ionizing radiation on the optical properties of QDs has become of great importance. In...

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