全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:... Hirokazu Nagai , Kan-Hua Lee , Masafumi Yamaguchi
来源:[J].Solar Energy(IF 2.952), 2017, Vol.144, pp.278-285Elsevier
摘要:Abstract(#br)The impact to the optical environment result from shading of PV panels becomes concerned. This paper describes how to calculate illumination level on the land around tracking PV (both isolated and arrayed) panel. The land under the flat-plate PV is dark by shading, b...
作者:... Gabriel Sala , Kan-Hua Lee , Masafumi Yamaguchi
来源:[J].Solar Energy(IF 2.952), 2017, Vol.147, pp.448-454Elsevier
摘要:Abstract(#br)CPV (Concentrator photovoltaic) requires accuracy in optical alignment. Optical misalignment in the module was measured and analyzed. Such information was useful to identify assembly problems and improved module performance.(#br)1-D and 2-D Monte Carlo simulations we...
作者:Kan-Hua Lee , Kazuma Ikeda ...
来源:[J].Journal of Crystal Growth(IF 1.552), 2016Elsevier
摘要:Abstract(#br)The N–H related defects at 3124 cm -1 are found to be acceptors in GaAsN grown by chemical beam epitaxy (CBE), by comparing the concentrations of N–H defects with those of acceptors as a function of annealing condition. The vibrations of N–H defects appear ...
作者:Kan-Hua Lee , Kazuma Ikeda ...
来源:[J].Journal of Alloys and Compounds(IF 2.39), 2015, Vol.649, pp.815-818Elsevier
摘要:Abstract(#br)The N–H related acceptor defects in GaAsN grown by chemical beam epitaxy (CBE) are studied by hydrogen isotopes, H and D. When the films are grown by a conventional arsenic source, deep level transient spectroscopy (DLTS) reveals two energy levels at 0.11 and 0....
作者:Kan-Hua Lee , Kazuma Ikeda ...
来源:[J].Journal of Crystal Growth(IF 1.552), 2015, Vol.432, pp.45-48Elsevier
摘要:Abstract(#br)The properties of the acceptor states in GaAsN grown by chemical beam epitaxy (CBE) are studied by analyzing their charges based on the Poole–Frenkel model. Deep level transient spectroscopy (DLTS) shows two acceptor levels at 0.11 and 0.19 eV above the valence ...
作者:Kan-Hua Lee , Kazuma Ikeda ...
来源:[J].Journal of Crystal Growth(IF 1.552), 2016Elsevier
摘要:Abstract(#br)The N–H related defects at 3124 cm -1 are found to be acceptors in GaAsN grown by chemical beam epitaxy (CBE), by comparing the concentrations of N–H defects with those of acceptors as a function of annealing condition. The vibrations of N–H defects appear ...
作者:Kenji Araki , Kan-Hua Lee , Masafumi Yamaguchi
来源:[J].Solar Energy(IF 2.952), 2017, Vol.153, pp.445-453Elsevier
摘要:Abstract(#br)Bandgap optimization of the tandem cells has been calculated by many scientists under the standard air-mass 1.5 spectrum or the site-specific conditions using statistics of meteorological observations and spectrum data. Calculation of the optimized bandgap combi...
作者:Kan-Hua Lee , Kenji Araki
来源:[J].Journal of Physics D: Applied Physics(IF 2.528), 2018, Vol.51 (13)IOP
摘要:Silicon solar cells are the most established solar cell technology and are expected to dominate the market in the near future. As state-of-the-art silicon solar cells are approaching the Shockley–Queisser limit, stacking silicon solar cells with other photovoltaic materials ...
作者:Kan-Hua Lee , Kenji Araki
来源:[J].Journal of Materials Research(IF 1.713), 2017, Vol.32 (18), pp.3445-3457Cambridge U Press
摘要:The present status of R&D for various types of solar cells is presented by overviewing research and development projects for solar cells in Japan as the PV R&D Project Leader of the New Energy and Industrial Technology Development Organization (NEDO) and the Japan Science an...
作者:Kan-Hua Lee , Kenji Araki ...
来源:[J].Journal of Materials Research(IF 1.713), 2018, Vol.33 (17), pp.2621-2626Cambridge U Press
摘要:Efficiency potential of crystalline Si solar cells is analyzed by considering external radiative efficiency (ERE), voltage, and fill factor losses. Crystalline Si solar cells have an efficiency potential of more than 28.5% by realizing ERE of 20% from about 5% and normalized...

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