全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:K. E. J. Goh , T. Hallam ...
来源:[J].Molecular Simulation(IF 1.056), 2005, Vol.31 (6-7), pp.505-515Taylor & Francis
摘要:We present a review of a detailed fabrication strategy for the realisation of nano and atomic-scale devices in silicon using phosphorus as a dopant and a combination of ultra-high vacuum scanning probe microscopy and silicon molecular beam epitaxy (MBE). In this work we have been...
作者:K. E. J. Goh , L. Oberbeck , M. Y. Simmons
来源:[J].physica status solidi (a)(IF 1.469), 2005, Vol.202 (6), pp.1002-1005Wiley
摘要:Abstract(#br)We present a study to determine the importance of phosphorus incorporation and hydrogen removal for the electrical activation of phosphorus dopants in Si:P δ ‐doped samples fabricated using phosphine dosing and molecular beam epitaxy (MBE). The carrier densities...
作者:K. E. J. Goh , L. Oberbeck ...
来源:[J].PHYSICAL REVIEW B(IF 3.767), 2006, Vol.73APS
摘要:We present a detailed study addressing the effect of doping density on electronic transport in Si:P δ-doped layers grown by phosphine dosing and low temperature molecular beam epitaxy. We demonstrate that the surface P coverage can be determined directly from scanning tunnel...
作者:K. E. J. Goh , M. Y. Simmons , and A. R. Hamilton
来源:[J].PHYSICAL REVIEW B(IF 3.767), 2007, Vol.76APS
摘要:A complete understanding of the activation of phosphorus dopants in silicon as a function of doping density is important for the fabrication of silicon transistors and devices as they scale down in size to the atomic level. Here, we present a systematic study of the low-temp...
作者:K. E. J. Goh , M. Y. Simmons , and A. R. Hamilton
来源:[J].PHYSICAL REVIEW B(IF 3.767), 2008, Vol.77APS
摘要:We investigate the use of three well established methods to model the electron-electron interaction correction to the conductivity in highly disordered two-dimensional systems. In order to determine the interaction correction δσee, we use each method to fit experimental magn...

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