全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:... Stone Cheng , Jesús A. del Alamo , Edward Yi Chang
来源:[J].Energies(IF 1.844), 2017, Vol.10 (2)DOAJ
摘要:This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N ba...
作者:Yufei Wu , Chia-Yu Chen , Jesús A. del Alamo
来源:[J].Microelectronics Reliability(IF 1.137), 2014, Vol.54 (12), pp.2668-2674Elsevier
摘要:Abstract(#br)We have investigated the role of temperature in the degradation of GaN High-Electron-Mobility-Transistors (HEMTs) under high-power DC stress. We have identified two degradation mechanisms that take place in a sequential manner: the gate leakage current increases...
作者:Joyce H. Wu , Jesús A. del Alamo
来源:[J].Solid State Electronics(IF 1.482), 2013, Vol.85, pp.6-11Elsevier
摘要:Abstract(#br)A Faraday cage structure using through-substrate vias is an effective strategy to suppress substrate crosstalk, particularly at high frequencies. Faraday cages can reduce substrate noise by 32 dB at 10 GHz, and 26 dB at 50 GHz. We have developed lumped-element, equiv...
作者:Donghyun Jin , Jesús A. del Alamo
来源:[J].Microelectronics Reliability(IF 1.137), 2012, Vol.52 (12), pp.2875-2879Elsevier
摘要:Abstract(#br)We have investigated the impact of high-power (HP) stress on the dynamic ON-resistance ( R ON ) in high-voltage GaN High-Electron-Mobility Transistors (HEMTs). We use a newly proposed dynamic R ON measurement methodology which allows us to observe R ON transients aft...
作者:Jesús A. del Alamo , Seiji Samukawa ...
来源:[J].physica status solidi (a)(IF 1.469), 2017, Vol.214 (3), pp.n/a-n/aWiley
摘要:In this article, we report a suppression of leakage current and an improvement of isolation breakdown voltage on GaN‐based high electron mobility transistors (HEMTs) by means of neutral beam (NB) etching. The plasma damage during dry etching process is one of the key reasons...
作者:Jesús A. del Alamo , Kurt Langworthy ...
来源:[J].Microelectronics Reliability(IF 1.137), 2010, Vol.51 (2), pp.201-206Elsevier
摘要:Abstract(#br)In GaN high-electron-mobility transistors, electrical degradation due to high-voltage stress is characterized by a critical voltage at which irreversible degradation starts to take place. Separately, cross-sectional TEM analysis has revealed significant crystallograp...
作者:... Tetsuya Suemitsu , Niamh Waldron , Jesús A. del Alamo
来源:[J].Journal of Crystal Growth(IF 1.552), 2004, Vol.278 (1), pp.596-599Elsevier
摘要:Abstract(#br)InP high electron mobility transistor (HEMT) structures with In 0.53 Ga 0.47 As channels and In 0.52 Al 0.48 As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50–100 Å InAlAs(Te) layers and...
作者:Jungwoo Joh , Jesús A. del Alamo
来源:[J].Microelectronics Reliability(IF 1.137), 2011, Vol.52 (1), pp.33-38Elsevier
摘要:Abstract(#br)We have investigated the RF power degradation of GaN high electron mobility transistors (HEMTs) with different gate placement in the source–drain gap. We found that devices with a centered gate show different degradation behavior from those with the gate placed ...
作者:... Feng Gao , Tomás Palacios , Jesús A. del Alamo
来源:[J].Microelectronics Reliability(IF 1.137), 2010, Vol.50 (6), pp.767-773Elsevier
摘要:Abstract(#br)It has recently been postulated that GaN high electron mobility transistors under high voltage stress degrade as a result of defect formation induced by excessive mechanical stress that is introduced through the inverse piezoelectric effect. This mechanism is charact...
作者:Sefa Demirtas , Jungwoo Joh , Jesús A. del Alamo
来源:[J].Microelectronics Reliability(IF 1.137), 2010, Vol.50 (6), pp.758-762Elsevier
摘要:Abstract(#br)We have electrically stressed GaN High Electron Mobility Transistors on Si substrate at high voltages. We observe a pattern of device degradation that differs markedly from previous reports in GaN-on-SiC HEMTs. Similarly to these devices, the gate leakage current of ...

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