全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:J.G. Simmons , O.S. Schwartz ...
来源:[J].BMC Pediatrics(IF 1.982), 2017, Vol.17 (1)Springer
摘要:Extant research has demonstrated that parenting behaviour can be a significant contributor to the development of brain structure and mental health during adolescence. Nonetheless, there is limited research examining these relationships during late childhood, and particularly in t...
作者:J.G. Simmons , M.L. Byrne ...
来源:[J].Developmental Cognitive Neuroscience(IF 3.16), 2015, Vol.14, pp.62-70Elsevier
摘要:Abstract(#br)Adolescence is a critical period of development, in which the increasing social and cognitive demands of independence need to be met by enhanced self-regulatory abilities. The cultivation of mindfulness has been associated with improved self-regulation in adult popul...
作者:J.G. Simmons , M.L. Byrne ...
来源:[J].Developmental Cognitive Neuroscience(IF 3.16), 2015, Vol.14 (C), pp.62-70DOAJ
摘要:Adolescence is a critical period of development, in which the increasing social and cognitive demands of independence need to be met by enhanced self-regulatory abilities. The cultivation of mindfulness has been associated with improved self-regulation in adult populations, and i...
作者:J.G. Simmons , S. Whittle
来源:[J].European Psychiatry(IF 3.285), 2013, Vol.28, pp.1-1Elsevier
摘要:Introduction(#br)Alterations of the Hypothalamic-Pituitary-Adrenal Axis (HPAA) may be related to the development of psychiatric disorders, especially in the context of childhood adversity. The “attenuation hypothesis” postulates that chronic childhood adversity leads to init...
作者:... J. Budinavicius , D.A. Thompson , J.G. Simmons
来源:[J].Nuclear Inst. and Methods in Physics Research, B(IF 1.266), 1995, Vol.106 (1), pp.179-182Elsevier
摘要:Abstract(#br)A broad beam ECR plasma source has been applied to low pressure hydrocarbon reactive ion etching of III–V compounds. An additional RF bias is applied to the sample stage providing the means for independent control of current density and bombarding energy of ions...
作者:V. Sargūnas , D.A. Thompson , J.G. Simmons
来源:[J].Solid State Electronics(IF 1.482), 1995, Vol.38 (1), pp.75-81Elsevier
摘要:Abstract(#br)Helium implantations were performed into epitaxial and bulk-doped n -type InP samples at 60 K and room temperature. The average resistivities achieved following implantation at 60 and 300 K and measured at 300 K were 4–6 × 10 3 ω cm. For implantation doses ...
作者:... D.A. Thompson , B.J. Robinson , J.G. Simmons
来源:[J].Materials Science & Engineering B(IF 1.846), 2001, Vol.80 (1), pp.232-235Elsevier
摘要:Abstract(#br)Bandgap engineering is used extensively in the telecommunications field. Quantum well intermixing (QWI) is a post-growth method of bandgap engineering that has been studied for the integration of photonic devices (Marsh et al., J. Vac. Sci. Technol. A16 (1998) 810). ...
作者:J.Z. Wan , D.A. Thompson , J.G. Simmons
来源:[J].Nuclear Inst. and Methods in Physics Research, B(IF 1.266), 1995, Vol.106 (1), pp.461-465Elsevier
摘要:Abstract(#br)Compositional disorder and interdiffusion in lattice-matched and strained-layer In x Ga 1− x As InP multiple quantum wells (MQWs), subjected to ion implantation and subsequent thermal annealing, have been studied. Measurements have shown that MQWs with compressi...

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