全部文献期刊会议图书|学者科研项目
中外文文献  中文文献  外文文献
作者:... D. Passeri , G.U. Pignatel , C. Scarpello
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2006, Vol.563 (1), pp.192-195
摘要:Abstract(#br)In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable approach to optimize the long-term radiation hardness of silicon detectors. In this work, we present a numerical model for the simulation of radiat...
作者:G.U. Pignatel , V. Radicci ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2005, Vol.552 (1), pp.20-26
摘要:Abstract(#br)We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detecto...
作者:G.U. Pignatel , M. Reinhard
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2008, Vol.589 (2), pp.259-267
摘要:Abstract(#br)Future generations of solid-state high-energy gamma imaging cameras require pixellated semiconductor photodetectors with the greatest possible detection efficiency. In this paper, a new type of planar silicon PIN photodiode is presented, in which both p + and n ...
作者:... M. Paranjape , G.U. Pignatel , M. Zen
来源:[J].Microelectronic Engineering(IF 1.224), 2000, Vol.53 (1), pp.547-551
摘要:Abstract(#br)Tetra-methyl ammonium hydroxide, or TMAH, is an anisotropic silicon etchant that is gaining more and more attention in the fabrication process of mechanical microstructures and device isolation, as an alternative to the more usual KOH and EDP etchants [1]: because of...
作者:G.U. Pignatel , I. Rachevskaia ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 1999, Vol.431 (1), pp.83-91
摘要:Abstract(#br)This paper is concerned with the preliminary results of a technological study aimed at the development of a fabrication process for double-sided AC-coupled silicon microstrip detectors. The approach adopted for the fabrication of both single-sided and double-sided de...
作者:G.U. Pignatel , L. Ferrario ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 1998, Vol.417 (2), pp.325-331
摘要:Abstract(#br)We report on the latest results obtained from the development of a fabrication technology for PIN radiation detectors with on-chip front-end junction field effect transistors (JFETs) integrated on high-resistivity, FZ silicon. P-doped polysilicon back-side gette...
作者:G.U. Pignatel , G. Verzellesi
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 1997, Vol.395 (3), pp.344-348
摘要:Abstract(#br)PIN diodes and other test structures have been fabricated on both n- and p-type, high-resistivity, Floating-Zone (FZ) silicon substrates. Different alternative extrinsic-gettering techniques have been adopted to the purpose of meeting the required specification ...
作者:G.U. Pignatel , C. Piemonte ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2009, Vol.617 (1), pp.242-243
摘要:Abstract(#br)In time-of-flight measurements, or positron emission tomography experiments where two gamma rays are detected in coincidence, the time resolution of the photodetector is of primary importance. SiPMs are very promising devices for these applications, since their ...
作者:G.U. Pignatel , S. Amon ...
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 1995, Vol.365 (2), pp.473-479
摘要:Abstract(#br)We report on the design of an n-channel Junction Field Effect Transistor (JFET) on fully-depleted, high-resistivity (5 kΩ cm), n-type silicon substrate, which is intended to be utilized as an active device in the on-chip preamplifier of the silicon radiation det...
作者:M. Petasecca , F. Moscatelli , G.U. Pignatel
来源:[J].Nuclear Inst. and Methods in Physics Research, A(IF 1.142), 2005, Vol.546 (1), pp.291-295
摘要:Abstract(#br)Thin detectors have been proposed to investigate the possibility to limit the full depletion voltage and the leakage current of heavily irradiated silicon devices. In this work we compare typical silicon detectors (p–n junctions over a 300 μm thick substrate) wi...

我们正在为您处理中,这可能需要一些时间,请稍等。

资源合作:cnki.scholar@cnki.net, +86-10-82896619   意见反馈:scholar@cnki.net

×