全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:Donghyun Jin , Jesús A. del Alamo
来源:[J].Microelectronics Reliability(IF 1.137), 2012, Vol.52 (12), pp.2875-2879Elsevier
摘要:Abstract(#br)We have investigated the impact of high-power (HP) stress on the dynamic ON-resistance ( R ON ) in high-voltage GaN High-Electron-Mobility Transistors (HEMTs). We use a newly proposed dynamic R ON measurement methodology which allows us to observe R ON transients aft...
作者:Donghyun Jin , Jong-Min Yeom ...
来源:[J].Journal of Sensors, 2017, Vol.2017DOAJ
摘要:Snow cover plays an important role in climate and hydrology, at both global and regional scales. Most previous studies have used static threshold techniques to detect snow cover, which can lead to errors such as misclassification of snow and clouds, because the reflectance o...
作者:Donghyun Jin , Jong-Min Yeom ...
来源:[J].Journal of Sensors, 2017, Vol.2017Hindawi
摘要:Snow cover plays an important role in climate and hydrology, at both global and regional scales. Most previous studies have used static threshold techniques to detect snow cover, which can lead to errors such as misclassification of snow and clouds, because the reflectance o...
作者:Donghyun Jin , Darae Lee
来源:[C].Remote Sensing2016SPIE
摘要:Many countries try to launch satellite to observe the Earth surface. As important of surface remote sensing is increased, the reflectance of surface is a core parameter of the ground climate. But observing the reflectance of surface by satellite have weakness such as temporal res...
作者:Donghyun Jin , Daehyun Kim ...
来源:[C].Electron Devices Meeting (IEDM), 2009 IEEE International2009IEEE
摘要:We have built a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. We verified its validity with simulations (Nextnano) and experimental measurements on High Electron Mobility Transistors (HEMTs) with...
作者:Donghyun Jin , del Alamo, J.A.
来源:[C].Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on2012IEEE
摘要:We have developed a new methodology to study the dynamic ON-resistance (RON) of high-voltage GaN High-Electron-Mobility Transistors (HEMTs). With this technique, we have investigated dynamic RON transients over a time span of 11 decades. In OFF to ON time transients, we obse...
作者:Donghyun Jin
来源:[J].Electron Devices, IEEE Transactions on;;Digital Object Identifier:10.1109/TED.2013.2274477, 2013, Vol.60 (10), pp.3190- 3196IEEE
摘要:We have developed a new methodology to investigate the dynamic ON-resistance (RON) of high-voltage GaN field-effect transistors. The new technique allows the study of RON transients after a switching event over an arbitrary length of time. Using this techniq...
作者:... Tae-Woo Kim , Donghyun Jin , Antoniadis, D.A.
来源:[C].Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials2011IEEE
摘要:The ability of Si CMOS to continue to scale down transistor size while delivering enhanced logic performance has recently come into question. An end to Moore's Law threatens to bring to a halt the microelectronics revolution: a historical 50 year run of exponential progress ...

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