全部文献期刊学位论文会议报纸专利标准年鉴图书|学者科研项目
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作者:Surajit Bera , Chandrima Mondal , Abhijit Biswas
来源:[J].Microsystem Technologies(IF 0.827), 2017, Vol.23 (9), pp.4123-4131Springer
摘要:We have developed an algorithm which utilizes model equations for MOSFETs to extract BSIM3v3.2.2 MOSFET model parameters of Ge-channel transistors. The model represents the entire transfer characteristics from sub-threshold to strong inversion regions and the output characte...
作者:Debapriya Roy , Abhijit Biswas
来源:[J].Microsystem Technologies(IF 0.827), 2017, Vol.23 (7), pp.2847-2857Springer
摘要:We investigate the impact of sidewall spacers on the analog/RF performance of double gate junctionless transistors at channel length of 30 nm using extensive numerical device simulation. Furthermore, we report the performance of a common source amplifier built employing such devi...
作者:P. S. Das , Abhijit Biswas
来源:[J].Applied Physics A(IF 1.545), 2015, Vol.118 (3), pp.967-974Springer
摘要:Abstract(#br)In this paper, we present the interfacial and electrical properties of GaAs MOS capacitors fabricated using RF-sputtered TaAlO x dielectrics with and without a silicon interface control layer (ICL). As-deposited films are analyzed by X-ray photoelect...
作者:Swagata Bhattacherjee , Abhijit Biswas
来源:[J].Microsystem Technologies(IF 0.827), 2019, Vol.25 (5), pp.1555-1562Springer
摘要:Abstract(#br)In this paper, we develop the low frequency noise (LFN) model for symmetric double gate InAsSb channel n-MOSFETs and report noise performance of such devices as well as amplifier circuits built using them. Our noise model relies on the drain current I d which is...
作者:Abhijit Biswas , Sarita Sarkar ...
来源:[J].Journal of Experimental Nanoscience(IF 0.875), 2016, Vol.11 (9), pp.681-694Taylor & Francis
摘要:ABSTRACT(#br)Stable cadmium sulphide (CdS) nanoclusters have been synthesised in non-ionic surfactant vesicles (niosomes). The nanocluster characteristics show strong dependence on the Cd2+ precursor concentration. At low precursor concentration, aggregates compri...
作者:Abhijit Biswas , Swagata Bhattacherjee
来源:[J].Microelectronics Reliability(IF 1.137), 2014, Vol.54 (8), pp.1527-1533Elsevier
摘要:Abstract(#br)We present a temperature dependent model for the threshold voltage V t and subthreshold slope S of strained-Si channel MOSFETs and validate it with reported experimental data for a wide range of temperature, channel doping concentration, oxide thickness and strain va...
作者:Abhijit Biswas , Ki-Seok Kim , Yoon H. Jeong
来源:[J].Journal of Magnetism and Magnetic Materials(IF 1.826), 2016, Vol.400, pp.36-40Elsevier
摘要:Abstract(#br)We investigate the effects of compressive strain on the electrical resistivity of 5 d iridium based perovskite SrIrO 3 by depositing epitaxial films of thickness 35 nm on various substrates such as GdScO 3 (110), DyScO 3 (110), and SrTiO 3 (001). Surprisingly, w...

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