全部文献期刊会议图书|学者科研项目
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作者:Lai-Guo Wang , Xu Qian , Yan-Qiang Cao ...
来源:[J].Nanoscale Research Letters(IF 2.524), 2015, Vol.10 (1), pp.1-8Springer
摘要:Abstract(#br)We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al 2 O 3 /HfO 2 /Al 2 O 3 -based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM ...
作者:Fetahović Irfan S. , Dolićanin Edin , Lazarević Đorđe R. ...
来源:[J].Nuclear Technology and Radiation Protection(IF 1), 2017, Vol.32 (4), pp.381-392DOAJ
摘要:In this paper we give an overview of radiation effects in emergent,non-volatile memory technologies. Investigations into radiation hardness ofresistive random access memory, ferroelectric random access memory,magneto-resistive random access memory, and phase change memory are pre...
作者:Jia-Qin Yang , Li-Yu Ting , Ruopeng Wang ...
来源:[J].Organic Electronics(IF 3.836), 2020, Vol.78
摘要:Abstract(#br)Developing new-style non-volatile memory is an important part to solve von Neumann bottleneck. Among numerous studies of memory device, resistive random-access memory (RRAM) is widely researched for their simple geometrical structure and high integration density. In...
作者:Chun Zhao , Ce Zhou Zhao , Stephen Taylor ...
来源:[J].Materials(IF 2.247), 2014, Vol.7 (7), pp.5117-5145DOAJ
摘要:Flash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-scaling cell size and increasing i...
作者:Sekhar C. Ray , Susanta Kumar Bhunia , Arindam Saha ...
来源:[J].Microelectronic Engineering(IF 1.224), 2015, Vol.146, pp.48-52Elsevier
摘要:... Raman Spectroscopy, voltage–current ( I – V ) and polarization–electric field ( P – E ) measurements have been carried out to study the micro-structural, electrical and ferroelectric behaviors of GO/rGO and CP-GO/rGO thin films to understand the possibility of fabrication of non-volatile...
作者:Zhulin Ma , Edwin H.-M. Sha , Qingfeng Zhuge ...
来源:[J].Future Generation Computer Systems(IF 1.864), 2020, Vol.105, pp.1-12Elsevier
摘要:... In the design of Non-Volatile Memory (NVM) based indexes, the hash-based structure is one of the most promising candidates since it can take full advantages of byte-addressable property of NVM to perform query operations with constant time complexity. However, we found t...
作者:Young-Sun Youn , Su-Kyung Yoon , Shin-Dug Kim
来源:[J].The Journal of Supercomputing(IF 0.917), 2017, Vol.73 (9), pp.4020-4041Springer
摘要:... In this research, we propose a new storage system using next-generation non-volatile memory that is suitable for exa-scale computing systems. This storage system is called the Cloud Computing Burst System (CCBS) and is composed of a unified table management module, data scori...
作者:Peng Zhang , Xudong Chen , Wen Li ...
来源:[J].Organic Electronics(IF 3.836), 2018, Vol.57, pp.335-340Elsevier
摘要:Abstract(#br)Non-volatile heterojunction transistor memory was fabricated by successively depositing pentacene/tris(8-hydroxy quinoline) aluminum(Alq 3 ) layers. In this specified configuration, pentacene functioned as the active layer between the source and drain of field-effe...
作者:Tae Kwon Lee , Dae Sol Kong , Da Woon Jin ...
来源:[J].Current Applied Physics(IF 1.814), 2019, Vol.19 (6), pp.728-732Elsevier
摘要:...48 )O 3 (PZT) thick films and their non-volatile memory characteristics. The Ni-Cr metal foil substrate allowed high-quality polycrystalline PZT films with flexible functionality to be fabricated using conventional sol-gel and high-temperature annealing methods. The 10-MeV p...
作者:R. Ortega-Hernandez , M. Coll , J. Gonzalez-Rosillo ...
来源:[J].Microelectronic Engineering(IF 1.224), 2015, Vol.147, pp.37-40Elsevier
摘要:Abstract(#br)The resistive switching of CeO 2− x /La 0.8 Sr 0.2 MnO 3 bilayer structures has been studied. First, the resistive switching (RS) characteristics of La 0.8 Sr 0.2 MnO 3 (LSMO) and the CeO 2− x layers are studied separately. Then, the bilayer characteristics are ...

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