全部文献期刊会议图书|学者科研项目
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作者:Xu Jiajia , Xu Zhicheng , Bai Zhizhong ...
来源:[J].Infrared Physics and Technology(IF 1.364), 2020
摘要:Abstract(#br)Surface leakage in long-wave infrared InAs/GaSb superlattice detectors is closely related to the state of Sb on the sidewall surface. The presence of free Sb on the sidewall surface after wet etching and GaSb after dry etching at 90 °C can considerably deteriorat...
作者:Chuan-Zhen Zhao , Yu Guo , Xiao-Dong Sun ...
来源:[J].Journal of Physics and Chemistry of Solids(IF 1.527), 2020, Vol.137
摘要:Abstract(#br)A model for the band gap energy of GaSb x N 1-x across the entire composition range is established. It is found that the model can estimate the band gap energy of GaSb x N 1-x wonderfully. It is also found that the calculated band gap minimum in this work is about 0....
作者:K. Roodenko , P.-K. Liao , D. Lan ...
来源:[J].Infrared Physics and Technology(IF 1.364), 2017
摘要:Abstract(#br)Undoped GaSb is p-type with the residual acceptor concentration of about 1e17 cm -3 due to the gallium vacancies and gallium in antimony site. Counter-doping of GaSb with low level of Te can reduce the net carrier concentration resulting in higher optical transparenc...
作者:Naoki Nishimoto , Junko Fujihara , Katsumi Yoshino
来源:[J].Applied Surface Science(IF 2.112), 2017, Vol.409, pp.375-380
摘要:Abstract(#br)GaSb may be suitable for biological applications, such as cellular sensors and bio-medical instrumentation because of its low toxicity compared with As (III) compounds and its band gap energy. Therefore, the biocompatibility and the film properties under physiologica...
作者:Ning Luo , Guang-Yao Huang , Gaohua Liao ...
来源:[J].Scientific Reports(IF 2.927), 2016, Vol.6 (1), pp.146802-442
摘要:Abstract(#br)The [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires have been studied by the 8 × 8 Luttinger-Kohn [inline-graphic not available: see fulltext] Hamiltonian to search for non-vanishing fundamental gaps between inverted electron and hole bands. We focus...
作者:Dengkui Wang , Xue Liu , Jilong Tang ...
来源:[J].Journal of Luminescence(IF 2.144), 2018, Vol.197, pp.266-269
摘要:Abstract(#br)The optical properties of GaSb strongly depend on the defect types and concentration. Doping is an effective method to improve the optical properties by changing the native defect types and concentration. In this paper, the native defects related emissions were suppr...
作者:B. Arpapay , U. Serincan
来源:[J].Superlattices and Microstructures(IF 1.564), 2020, Vol.140
摘要:Abstract(#br)GaSb epilayers were grown on nominal Si (001) substrates by molecular beam epitaxy, using AlSb nucleation layer (NL) as an interfacial misfit array. The effects of AlSb NL thickness, growth temperature and post annealing on the GaSb epilayers in terms of formation of...
作者:A. K. Kushwaha
来源:[J].International Journal of Thermophysics(IF 0.568), 2017, Vol.38 (7)
摘要:A proposed eleven-parameter three-body shell model is used to study the lattice dynamical properties such as phonon dispersion relations along high symmetry directions, phonon density of states, variation of specific heat and Debye characteristic temperature with absolute temperature, elastic constants and related properties for III–V semiconductor AlSb, GaSb...
作者:Feng Ning , Li-Ming Tang , Yong Zhang ...
来源:[J].Scientific Reports(IF 2.927), 2015, Vol.5 (1), pp.19834-233
摘要:Abstract(#br)By performing first-principles calculation, we investigated the electronic properties of remotely p-type doping GaSb nanowire by a Zn-doped InAs shell. The results show that for bare zinc-blende (ZB) [111] GaSb/InAs core-shell nanowire the Zn p -type doped InAs shell...
作者:Ngcali Tile , Chinedu C. Ahia , Jaco Olivier ...
来源:[J].Physica B: Physics of Condensed Matter(IF 1.327), 2018, Vol.535, pp.20-23
摘要:Abstract(#br)This study focuses on the growth of GaSb/GaAs quantum dots (QD) using an atmospheric pressure MOVPE system. For the best uncapped dots, the average dot height, base diameter and density are 5 nm, 45 nm and 4.5×10 10 cm −2 , respectively. Capping of GaSb QDs ...

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