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作者:Tingting Liu , Hong Lei
来源:[J].Applied Surface Science(IF 2.112), 2017, Vol.413, pp.16-26
摘要:Abstract(#br)Abrasive is one of the most important factors in chemical mechanical polishing (CMP). In order to improve the polishing qualities of sapphire substrates, the novel Nd 3+ -doped colloidal SiO 2 composite abrasives were prepared by seed-induced growth method. In thi...
作者:H.S. Lee , H.D. Jeong , D.A. Dornfeld
来源:[J].Precision Engineering(IF 1.393), 2013, Vol.37 (2), pp.483-490
摘要:Abstract(#br)A novel semi-empirical model was developed for predicting the material removal rate (MRR) during chemical mechanical polishing (CMP) based on the following assumptions: plastic contact at the wafer–particle interface, elastic contact at the pad–particle interfa...
作者:Nam-Hoon Kim , Min-Ho Choi , Sang-Yong Kim ...
来源:[J].Microelectronic Engineering(IF 1.224), 2005, Vol.83 (3), pp.506-512
摘要:Abstract(#br)Chemical mechanical polishing (CMP) has been widely accepted for the metallization of copper interconnection in ultra-large scale integrated circuits (ULSIs) manufacturing. It is important to understand the effect of the process variables such as turntable speed, hea...
作者:Honglin Zhu , Luiz A. Tessaroto , Robert Sabia ...
来源:[J].Applied Surface Science(IF 2.112), 2004, Vol.236 (1), pp.120-130
摘要:Abstract(#br)The polishing removal rate and surface quality of sapphire (Al 2 O 3 ) varies greatly with crystal orientation when chemical effects couple with abrasive removal in chemical mechanical polishing (CMP). The relationship of orientation, solution chemistry and abrasi...
作者:Nam-Hoon Kim , Pil-Ju Ko , Seock Koo Kang ...
来源:[J].Microelectronic Engineering(IF 1.224), 2007, Vol.84 (11), pp.2702-2706
摘要:... The application possibility of chemical mechanical polishing (CMP) processes to the patterning of ferroelectric thin film instead of plasma etching was investigated in our previous study for improvement of an angled sidewall which prevents the densification of FeRAM. In this ...
作者:GuoShun Pan , ZhongHua Gu , Yan Zhou ...
来源:[J].Wear(IF 1.262), 2011, Vol.273 (1), pp.100-104
摘要:... In addition, the enhancement of polishing rate owning to the modified silicon particles in silicon wafer Chemical Mechanical Polishing (CMP) is observed.
作者:Yan Zhou , Guoshun Pan , Xiaolei Shi ...
来源:[J].Tribology International(IF 1.536), 2015, Vol.87, pp.145-150
摘要:Absrtact(#br)Towards sapphire and SiC wafer, clear and regular atomic step morphology could be observed all-over the surface via AFM. However, the variations of atomic step widths and step directions are different on the whole of different wafer surfaces: that on sapphire wafer a...
作者:Nam-Hoon Kim , Pil-Ju Ko , Gwon-Woo Choi ...
来源:[J].Thin Solid Films(IF 1.604), 2005, Vol.504 (1), pp.166-169
摘要:Abstract(#br)Pad conditioning temperature effects were investigated on the improvement of silicon dioxide chemical mechanical polishing (oxide-CMP) performances. The characteristics of silica slurry including pH and particle size were changed by the process temperature of the fri...
作者:Yan Zhou , Guoshun Pan , Xiaolei Shi ...
来源:[J].Applied Surface Science(IF 2.112), 2014, Vol.316, pp.643-648
摘要:Abstract(#br)Chemical mechanical polishing (CMP) removal mechanisms of on-axis Si-face SiC wafer have been investigated through X-ray photoelectron spectroscopy (XPS), UV–visible (UV–vis) spectroscopy and atomic force microscopy (AFM). XPS results indicate that silicon ox...

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